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Analysis of Cu(In,Ga)Se2 solar cells: Why performance decreases with increasing Ga content

Identifieur interne : 014258 ( Main/Repository ); précédent : 014257; suivant : 014259

Analysis of Cu(In,Ga)Se2 solar cells: Why performance decreases with increasing Ga content

Auteurs : RBID : Pascal:99-0324149

Descripteurs français

Pascal (Inist)
- 8460J, Etude expérimentale, Cellule solaire, Cuivre séléniure, Indium séléniure, Gallium séléniure, Molybdène, Contact électrique, Efficacité, Mobilité porteur charge, Réponse spectrale, Spectre visible, Spectre UV, Cuivre composé, Indium composé, Gallium composé, Sélénium composé, Evaluation performance.
Wicri :
- concept : Molybdène.

English descriptors

KwdEn :
- Carrier mobility, Copper compounds, Copper selenides, Efficiency, Electric contacts, Experimental study, Gallium compounds, Gallium selenides, Indium compounds, Indium selenides, Molybdenum, Performance evaluation, Selenium compounds, Solar cells, Spectral response, Ultraviolet spectra, Visible spectra.

Abstract

Solar cells have been made from uniform Cu(In,Ga)Se₂ films deposited by elemental evaporation with two different Ga compositions, Ga/[In+Ga]=0.30 and 0.65. The solar cells fabricated from these uniform films have 15% efficiency for Ga/[In+Ga]=0.30, but the device efficiency is less than expected for the high Ga content due primarily to a decrease in fill factor and open circuit voltage. Analysis of current-voltage results have shown that the main cause of this decrease is a voltage dependent light generated current, J_L,(V). Devices were fabricated with both standard (1 μm) and semi-transparent (0.04 μm) Mo contacts. Bi-facial spectral response measurements were made and analyzed on the devices with the semi-transparent Mo contacts in order to determine the changes in collection efficiency as a function of changing Ga composition and applied voltage. This analysis determined that the decrease in the light generated current with increasing voltage is primarily due to a reduction in minority carrier diffusion length, L, from about 0.8 to 0.1 μm. © 1999 American Institute of Physics.

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Pascal:99-0324149

Le document en format XML

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 solar cells: Why performance decreases with increasing Ga content</title>
<author><name sortKey="Phillips, J E" uniqKey="Phillips J">J. E. Phillips</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716-3820</s1>
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<country xml:lang="fr">États-Unis</country>
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<wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea>
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<author><name sortKey="Shafarman, W N" uniqKey="Shafarman W">W. N. Shafarman</name>
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<country xml:lang="fr">États-Unis</country>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier mobility</term>
<term>Copper compounds</term>
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<term>Experimental study</term>
<term>Gallium compounds</term>
<term>Gallium selenides</term>
<term>Indium compounds</term>
<term>Indium selenides</term>
<term>Molybdenum</term>
<term>Performance evaluation</term>
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<term>Spectral response</term>
<term>Ultraviolet spectra</term>
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<front><div type="abstract" xml:lang="en">Solar cells have been made from uniform Cu(In,Ga)Se<sub>2</sub>
 films deposited by elemental evaporation with two different Ga compositions, Ga/[In+Ga]=0.30 and 0.65. The solar cells fabricated from these uniform films have 15% efficiency for Ga/[In+Ga]=0.30, but the device efficiency is less than expected for the high Ga content due primarily to a decrease in fill factor and open circuit voltage. Analysis of current-voltage results have shown that the main cause of this decrease is a voltage dependent light generated current, J<sub>L</sub>
,(V). Devices were fabricated with both standard (1 μm) and semi-transparent (0.04 μm) Mo contacts. Bi-facial spectral response measurements were made and analyzed on the devices with the semi-transparent Mo contacts in order to determine the changes in collection efficiency as a function of changing Ga composition and applied voltage. This analysis determined that the decrease in the light generated current with increasing voltage is primarily due to a reduction in minority carrier diffusion length, L, from about 0.8 to 0.1 μm. © 1999 American Institute of Physics.</div>
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,(V). Devices were fabricated with both standard (1 μm) and semi-transparent (0.04 μm) Mo contacts. Bi-facial spectral response measurements were made and analyzed on the devices with the semi-transparent Mo contacts in order to determine the changes in collection efficiency as a function of changing Ga composition and applied voltage. This analysis determined that the decrease in the light generated current with increasing voltage is primarily due to a reduction in minority carrier diffusion length, L, from about 0.8 to 0.1 μm. © 1999 American Institute of Physics.</s0>
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Analysis of Cu(In,Ga)Se2 solar cells: Why performance decreases with increasing Ga content

Analysis of Cu(In,Ga)Se2 solar cells: Why performance decreases with increasing Ga content

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri